Evidence of strong Auger recombination in semiconductor-doped glasses.

Autor: de Rougemont, F., Frey, R., Roussignol, P., Ricard, D., Flytzanis, C.
Předmět:
Zdroj: Applied Physics Letters; 6/8/1987, Vol. 50 Issue 23, p1619, 3p
Abstrakt: Intracavity nearly degenerate four-wave mixing has been used together with transmission measurements to evidence the important role played by Auger recombination in the relaxation rate of electron-hole pairs in semiconductor-doped glasses pumped by high laser intensities. Results show a shortening by a factor of 100 of the recombination carrier lifetime when the laser intensity is near damage threshold. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index