| Autor: |
Iseler, G. W., Ahern, Brian S. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/16/1986, Vol. 48 Issue 24, p1656, 2p |
| Abstrakt: |
Semi-insulating crystals of InP with resistivities of 1–3×106 Ω cm have been grown by the liquid encapsulated Czochralski method from melts co-doped with Ti, a deep donor located 0.62±0.02 eV below the conduction band, and either Zn, Cd, or Be. This technique should make it possible to obtain crystals with resistivities of 107–108 Ω cm, which would be of interest for integrated circuit applications if their thermal stability were found to exceed that of Fe-doped semi-insulating InP. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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