| Autor: |
Bhide, R. S., Manorama, V., Pawar, S. K., Babras, Suvarna, Bhoraskar, S. V., Bhide, V. G. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/8/1990, Vol. 57 Issue 15, p1528, 3p |
| Abstrakt: |
Exoelectron emission was observed from previously light soaked, glow discharge prepared a-Si:H films by thermal stimulation. The energy analysis of exoelectrons was incorporated by a 127° cylindrical deflection analyzer (CDA). Observed energies of exoelectrons (4–8 eV) suggest that the delocalized electron gains energy during emission either from the Coulomb potential or from the exchange of energy from dangling bond annihilation. Several models of dangling bond creation are discussed; however, the actual mechanism appears to be more complex. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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