| Autor: |
Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., Semenikhin, P. V. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2014, Vol. 1610, p119-123, 5p, 4 Graphs |
| Abstrakt: |
A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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