| Autor: |
Khirunenko, L. I., Pomozov, Yu. V., Sosnin, M. G., Abrosimov, N. V., Reimann, H. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2014, Vol. 1583, p75-79, 5p, 2 Charts, 4 Graphs |
| Abstrakt: |
It has been found that upon annealing of irradiated Ge doped with gallium and Sn simultaneously with disappearance of divacancies V20 the appearance of the new absorption spectrum consisting of sharp lines was observed. The spectrum is identical to the absorption spectrum of gallium. It is shown that the defect, to which the new spectrum corresponds, has hydrogen-like properties. The distances between the lines in the spectrum are in good agreement with those predicted by effective-mass theory. The appearance of Fano resonance in the continuum region in addition to intracenter transitions of the defect was detected. The defect found is identified as SnV V20Ga. The binding energy for the ground state of the SnV V20Ga centers has been estimated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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