| Autor: |
Zaknoune, Mohammed, Okada, Etienne, Mairiaux, Estelle, Roelens, Yannick, Ducatteau, Damien, Frijlink, Peter, Rocchi, Marc, Maher, Hassan |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Mar2014, Vol. 35 Issue 3, p321-323, 3p |
| Abstrakt: |
We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20\,\times\,9.5~\mum^2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/\mum^2 (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 mW/\mum^2 (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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