Gate-controlled doping in carbon-based FETs.
Autor: | Knoch, Joachim, Grap, Thomas, Muller, Marcel |
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Zdroj: | 2013 IFIP/IEEE 21st International Conference on Very Large Scale Integration (VLSI-SoC); 2013, p162-167, 6p |
Databáze: | Complementary Index |
Externí odkaz: |