Ion-implanted high microwave power indium phosphide transistors.
| Autor: | Biedenbender, M.D., Kapoor, V.J., Messick, L.J., Nguyen, R. |
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| Zdroj: | IEEE Transactions on Microwave Theory & Techniques; 1989, Vol. 37 Issue 9, p1321-1326, 6p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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