Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition.
| Autor: | Vogel, E.M., Hill, W.L., Misra, V., McLarty, P.K., Wortman, J.J., Hauser, J.R., Morfouli, P., Ghibaudo, G., Ouisse, T. |
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| Zdroj: | IEEE Transactions on Electron Devices; 1996, Vol. 43 Issue 5, p753-758, 6p |
| Databáze: | Complementary Index |
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