Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs.
| Autor: | Hill, W.L., Vogel, E.M., Misra, V., McLarty, P.K., Wortman, J.J. |
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| Zdroj: | IEEE Transactions on Electron Devices; 1996, Vol. 43 Issue 1, p15-22, 8p |
| Databáze: | Complementary Index |
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