Modeling of short-pulse threshold voltage shifts due to DX centers in Al/sub x/Ga/sub 1-x/As/GaAs and Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As MODFET's.

Autor: Chandra, A., Foisy, M.C.
Zdroj: IEEE Transactions on Electron Devices; 1991, Vol. 38 Issue 6, p1238-1245, 8p
Databáze: Complementary Index