Radiation tolerance of NMOS technology on indium phosphide.
Autor: | Lile, D.L., Taylor, M.J., Messick, L.J., Zeisse, C.R., Collins, D.A. |
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Zdroj: | IEEE Electron Device Letters; 1984, Vol. 5 Issue 3, p94-96, 3p |
Databáze: | Complementary Index |
Externí odkaz: |