Very high performance 50 nm CMOS at low temperature.
| Autor: | Wind, S.J., Shi, L., Lee, K.-L., Roy, R.A., Zhang, Y., Sikorski, E., Kozlowski, P., D'emic, C., Bucchignano, J.J., Wann, H.-J., Viswanathan, R.G., Cai, J., Taur, Y. |
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| Zdroj: | International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p928-930, 3p |
| Databáze: | Complementary Index |
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