High power 4H-SiC static induction transistors.
Autor: | Siergiej, R.R., Clarke, R.C., Aganval, A.K., Brandt, C.D., Burk, A.A., Morse, A., Orphanos, P.A. |
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Zdroj: | Proceedings of International Electron Devices Meeting; 1995, p353-356, 4p |
Databáze: | Complementary Index |
Externí odkaz: |