High power 4H-SiC static induction transistors.

Autor: Siergiej, R.R., Clarke, R.C., Aganval, A.K., Brandt, C.D., Burk, A.A., Morse, A., Orphanos, P.A.
Zdroj: Proceedings of International Electron Devices Meeting; 1995, p353-356, 4p
Databáze: Complementary Index