Advanced dielectrics for gate oxide, DRAM and RF capacitors.

Autor: van Dover, R.B., Fleming, R.M., Schneemeyer, L.F., Alers, G.B., Werder, D.J.
Zdroj: International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p823-826, 4p
Databáze: Complementary Index