Characterization of IC devices fabricated in low temperature (550°c) epitaxy by UHV/CVD technique.
| Autor: | Nguyen, T.N., Harame, D.L., Stork, J.M.C., LeGoues, F.K., Meyerson, B.S. |
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| Zdroj: | 1986 International Electron Devices Meeting; 1986, p304-307, 4p |
| Databáze: | Complementary Index |
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