Ion implanted lateral In.2Ga.8As/GaAs strained-layer superlattice photodetector.
| Autor: | Bulman, G.E., Myers, D.R., Wiczer, J.J., Dawson, L.R., Biefeld, R.M., Zipperian, T.E. |
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| Zdroj: | 1984 International Electron Devices Meeting; 1984, p719-722, 4p |
| Databáze: | Complementary Index |
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