Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs.
| Autor: | Cabout, T., Perniola, L., Jousseaume, V., Grampeix, H., Nodin, J.F., Toffoli, A., Guillermet, M., Jalaguier, E., Vianello, E., Molas, G., Reimbold, G., De Salvo, B., Diokh, T., Candelier, P., Pirrotta, O., Padovani, A., Larcher, L., Bocquet, M., Muller, C. |
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| Zdroj: | 2013 5th IEEE International Memory Workshop; 2013, p116-119, 4p |
| Databáze: | Complementary Index |
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