| Autor: |
Krajewski, Tomasz A., Stallinga, Peter, Zielony, Eunika, Goscinski, Krzysztof, Kruszewski, Piotr, Wachnicki, Lukasz, Aschenbrenner, Timo, Hommel, Detlef, Guziewicz, Elzbieta, Godlewski, Marek |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; May2013, Vol. 113 Issue 19, p194504, 6p, 2 Charts, 7 Graphs |
| Abstrakt: |
In this work, a n-ZnO/p-GaN heterojunction is analyzed using admittance spectroscopy techniques. Capacitance transient measurements performed at 10 kHz reveal four majority-carrier deep levels, the most important one located at approximately 0.57 eV below the ZnO conduction band (CB) edge with a density about two orders of magnitude below the doping level (NT = 4 × 1015 cm-3). The others, located at 0.20 eV, 0.65 eV, and 0.73 eV, are about three orders of magnitude below the doping level (NT = 4-9 × 1014 cm-3). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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