| Autor: |
Keckes, J., Ortner, B., Jakabovic, J., Kovac, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/1998, Vol. 84 Issue 2, p751, 5p, 7 Diagrams |
| Abstrakt: |
Presents information on a study of annealed aluminium (Al)/n-InP structures, prepared as Schottky contacts. Role of the InP material in high-speed metal-semiconductor field-effect transistors and optical devices; Experimental procedures used to conduct the study; Samples annealed at temperatures above melting point of Al (660.1 degrees Celsius). |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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