NexFET generation 2, new way to power.
Autor: | Boyi Yang, Shuming Xu, Korec, Jacek, Jun Wang, Lopez, Ozzie, Jauregui, David, Kocon, Christopher, Herbsommer, Juan, Molloy, Simon, Daum, Gary, Haian Lin, Pearce, Charles, Noquil, Jonathan, Shen, John |
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Zdroj: | 2011 IEEE International Electron Devices Meeting (IEDM); 2011, p1.4-14, 0p |
Databáze: | Complementary Index |
Externí odkaz: |