NexFET generation 2, new way to power.

Autor: Boyi Yang, Shuming Xu, Korec, Jacek, Jun Wang, Lopez, Ozzie, Jauregui, David, Kocon, Christopher, Herbsommer, Juan, Molloy, Simon, Daum, Gary, Haian Lin, Pearce, Charles, Noquil, Jonathan, Shen, John
Zdroj: 2011 IEEE International Electron Devices Meeting (IEDM); 2011, p1.4-14, 0p
Databáze: Complementary Index