M.O.S. Transistors with > 1 μm Thick Gate Oxide for Ionizing Radiation Dosimetry.

Autor: Gessinn, F., Sarrabayrouse, G.
Zdroj: MRS Online Proceedings Library; 01/05/1993, Vol. 302, pN.PAG-1, 1p
Databáze: Complementary Index