M.O.S. Transistors with > 1 μm Thick Gate Oxide for Ionizing Radiation Dosimetry.
Autor: | Gessinn, F., Sarrabayrouse, G. |
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Zdroj: | MRS Online Proceedings Library; 01/05/1993, Vol. 302, pN.PAG-1, 1p |
Databáze: | Complementary Index |
Externí odkaz: |
Autor: | Gessinn, F., Sarrabayrouse, G. |
---|---|
Zdroj: | MRS Online Proceedings Library; 01/05/1993, Vol. 302, pN.PAG-1, 1p |
Databáze: | Complementary Index |
Externí odkaz: |