Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing.

Autor:	Tokuda, Yutaka, Kobayashi, Nobuji, Inoue, Yajiro, Usami, Akira, Imura, Makoto
Zdroj:	Journal of Materials Research; 04/01/1989, Vol. 4 Issue 2, p241-243, 3p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink