| Autor: |
Sherry, Hani, Grzyb, Janusz, Zhao, Yan, Hadi, Richard Al, Cathelin, Andreia, Kaiser, Andreas, Pfeiffer, Ullrich |
| Zdroj: |
2012 IEEE International Solid-State Circuits Conference; 1/ 1/2012, p252-254, 3p |
| Abstrakt: |
Future imaging applications in the submillimeter-Wave range (300GHz to 3THz) require RF systems that can achieve high sensitivity and portability at low power consumption levels. In particular, CMOS process technologies are attractive due to their low price tag for industrial, surveillance, scientific, and medical applications. Recently, CMOS-based detectors have shown good sensitivity up to 1THz with NEPs on the order of 66pW/√(Hz) at 1THz [1]. However, CMOS terahertz imagers developed thus far have only operated single detectors based on lock-in measurement techniques to acquire raster-scanned images with frame rates on the order of minutes [2]. To address these impediments, we present a low-power 1kpixel terahertz camera chip fully compliant with an industrial 65nm ft/fmax=160GHz/200GHz CMOS process technology. The active-pixel circuit topology is designed to accommodate the optics for wide bandwidth (0.6 to 1THz) in stand-off detection with a 40dBi Si-lens. It includes row/col select and integrate-and-dump circuitry capable of capturing terahertz images with video frame rates up to 25fps at a power consumption of 2.5μW/pixel. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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