| Autor: |
Chevalier, P., Lacave, T., Canderle, E., Pottrain, A., Carminati, Y., Rosa, J., Pourchon, F., Derrier, N., Avenier, G., Montagné, A., Balteanu, A., Dacquay, E., Sarkas, I., Céli, D., Gloria, D., Gaquière, C., Voinigescu, S. P., Chantre, A. |
| Zdroj: |
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along with CML ring oscillators and circuit results up to the D band. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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