| Autor: |
Fischer, G. G., Micusik, D., Pocej, A. |
| Zdroj: |
2012 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
The reliability of high-performance SiGe:C HBTs was studied under mixed-mode stress conditions. We applied much longer stress-times than previous investigations and observed a not yet described saturation of the base current degradation with stress-time. This saturation behavior was integrated into an ageing function enabling improved prediction of HBT and RF circuit ageing during a 10 year life-time frame. Additionally, reverse stress tests confirmed also an increase of the baseemitter capacitance. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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