| Autor: |
Marinkovic, Z., Crupi, G., Schreurs, D. M. M.-P., Caddemi, A., Markovic, V. |
| Zdroj: |
2012 28th International Conference on Microelectronics Proceedings; 1/ 1/2012, p265-268, 4p |
| Abstrakt: |
In this paper we extract and validate a small-signal neural model for FinFETs. Namely, artificial neural networks are used for modeling the dependence of the small-signal admittance parameters for a FinFET on bias voltages and frequency. The model is developed for the actual transistor, which is obtained after de-embedding the effects of the probe pads, transmission lines, and substrate. The extracted model is validated in a wide range of operating bias conditions up to 50 GHz. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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