| Autor: |
Lyubutin, Sergei K., Mesyats, Gennady A., Rukin, Sergei N., SlovikovskV, Boris G., Tsyranov, Sergei N. |
| Zdroj: |
2004 International Conference on High-Power Particle Beams (BEAMS 2004); 1/ 1/2004, p239-242, 4p |
| Abstrakt: |
Tunneling-assisted impact ionization fronts in semiconductors recently investigated theoretically by Rodin et al [1] are expected to be much faster and generate higher plasma concentrations in comparison with the traditional impact ionization. We have conducted experiments and numerical simulations of this new switching process. The overvoltage across tested tunneling-assisted delayed breakdown device (TADBD)was equal to about 10 kV/ns per one structure. TADBD included 20 series connected semiconductor structures. We have obtained output pulses having 150-kV amplitude across a 50-Ohm external load with about 200-ps rise time. Maximum current density in the T ADBD was ∼13 kA/cm2. The maximum rise rates of the current and the voltage were 10 kA/ns and 500 kV/ns respectively. Numerical simulations showed that the triggering occurred after a delay of 1 ns, when the threshold of tunneling ionization of 1 MY/cm was reached in vicinity of p-n junction. Tunneling-assisted impact ionization fronts pass through the structure in both directions from p-n junction within approximately 60 ps, filling it with electron-hole plasma having a concentration of about 1017 cm−3. The total velocity of the front's propagation is about 20 times higher than the saturated velocity of the carriers. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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