High-efficiency p–n junction GaAs IMPATT devices.
| Autor: | Rosztoczy, F.E., Long, S.I., Goldwasser, R.E., Kinoshita, J. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 04/17/1975, Vol. 11 Issue 8, p179-181, 3p |
| Databáze: | Complementary Index |
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