Recent progress and current issues in SiC semiconductor devices for power applications.

Autor: Johnson, C.M., Wright, N.G., Uren, M.J., Hilton, K.P., Rahimo, M., Hinchley, D.A., Knights, A.P., Morrison, D.J., Horsfall, A.B., Ortolland, S., O'Neill, A.G.
Zdroj: IEE Proceedings -- Circuits, Devices & Systems; Apr2001, Vol. 148 Issue 2, p101-108, 8p
Databáze: Complementary Index