| Autor: |
Lin, Guan-Bo, Shan, Qifeng, Birkel, Andrew J., Cho, Jaehee, Fred Schubert, E., Crawford, Mary H., Westlake, Karl R., Koleske, Daniel D. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/10/2012, Vol. 101 Issue 24, p241104, 5p, 4 Graphs |
| Abstrakt: |
We report a method to determine the radiative efficiency (RE) of a semiconductor by using room-temperature excitation-dependent photoluminescence measurements. Using the ABC model for describing the recombination of carriers, we show that the theoretical width of the RE-versus-carrier-concentration (n) curve is related to the peak RE. Since the normalized external quantum efficiency, EQEnormalized, is proportional to the RE, and the square root of the light-output power, [formula], is proportional to n, the experimentally determined width of the EQEnormalized-versus-n curve can be used to determine the RE. We demonstrate a peak RE of 91% for a Ga0.85In0.15N quantum well. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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