InP/InGaAs heterojunction bipolar transistors grown on Ge/P co-implanted InP substrates by metal-organic molecular beam epitaxy.
| Autor: | Sung, W.J., Kopf, R.F., Werder, D.J., Liu, C.T., Chen, Y.K., Chen, J., Zhu, E.J., Chang, M.F. |
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| Zdroj: | Proceedings IEEE Lester Eastman Conference on High Performance Devices; 2002, p245-247, 3p |
| Databáze: | Complementary Index |
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