BSIM4 gate leakage model including source-drain partition.
Autor: | Cao, K.M., Lee, W.-C., Liu, W., Jin, X., Su, P., Fung, S.K.H., An, J.X., Yu, B., Hu, C. |
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Zdroj: | International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p815-818, 4p |
Databáze: | Complementary Index |
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