BSIM4 gate leakage model including source-drain partition.

Autor: Cao, K.M., Lee, W.-C., Liu, W., Jin, X., Su, P., Fung, S.K.H., An, J.X., Yu, B., Hu, C.
Zdroj: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p815-818, 4p
Databáze: Complementary Index