Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices.
| Autor: | Severi, S., Anil, K.G., Henson, K., Lauwers, A., Veloso, A., de Marneffe, J.F., Ramos, J., Eyben, P., Vandervost, W., Jurczak, M., Biesemans, S., De Meyer, K., Pawlak, J.B., Duffy, R., Lindsay, R., Camillo-Castillo, R.A., Dachs, C. |
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| Zdroj: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p99-102, 4p |
| Databáze: | Complementary Index |
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