Scaling deep trench based eDRAM on SOI to 32nm and Beyond.
| Autor: | Wang, G., Anand, D., Butt, N., Cestero, A., Chudzik, M., Ervin, J., Fang, S., Freeman, G., Ho, H., Khan, B., Kim, B., Kong, W., Krishnan, R., Krishnan, S., Kwon, O., Liu, J., McStay, K., Nelson, E., Nummy, K., Parries, P. |
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| Zdroj: | 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p |
| Databáze: | Complementary Index |
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