A high performance 90nm SOI technology with 0.992 μm2 6T-SRAM cell.
| Autor: | Khare, M., Ku, S.H., Donaton, R.A., Greco, S., Brodsky, C., Chen, X., Chou, A., DellaGuardia, R., Deshpande, S., Doris, B., Fung, S.K.H., Gabor, A., Gribelyuk, M., Holmes, S., Jamin, F.F., Lai, W.L., Lee, W.H., Li, Y., McFarland, P., Mo, R. |
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| Zdroj: | Digest. International Electron Devices Meeting; 2002, p407-410, 4p |
| Databáze: | Complementary Index |
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