Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM.
| Autor: | Goyal, P., Gupta, S., Krishnan, R., Davies, W., Ho, H., Tessier, A., Arya, A., Deshpande, S., Fang, S., Lee, S., Li, Z., Liu, J., Takalkar, R., Dadson, J., Chakravarti, A., Domenicucci, A., Shepard, J., McStay, K., Morgenfeld, B., Allen, S. |
|---|---|
| Zdroj: | 2010 IEEE International SOI Conference (SOI); 2010, p1-2, 2p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|