Improved 2-D regional transit time analysis for optimized scaling of SiGe HBTs.
| Autor: | Moen, K.A., Jiahui Yuan, Chakraborty, P.S., Bellini, M., Cressler, J.D., Ho, H., Yasuda, H., Wise, R. |
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| Zdroj: | 2010 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2010, p257-260, 4p |
| Databáze: | Complementary Index |
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