An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds.
| Autor: | Jiahui Yuan, Cressler, J.D., Moen, K.A., Chakraborty, P.S. |
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| Zdroj: | 2010 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2010, p157-160, 4p |
| Databáze: | Complementary Index |
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