Atomistic modeling of unintentional single charge effects in silicon nanowire FETs.
| Autor: | Hindupur, R., Islam, S., Ahmed, S. |
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| Zdroj: | Nanotechnology Materials & Devices Conference (NMDC), 2010 IEEE; 2010, p282-285, 4p |
| Databáze: | Complementary Index |
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