Class 3 HBM and class M4 MM ESD protected 5.5 GHz LNA in 90 nm RFCMOS using above-IC inductor.
| Autor: | Thijs, S., Linten, D., Natarajan, M.I., Jeamsaksiri, W., Mercha, A., Ramos, J., Sun, X., Carchon, G., Soussan, P., Nakaie, T., Sawada, M., Hasebe, T., Wambacq, P., Decoutere, S., Groeseneken, G. |
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| Zdroj: | 2005 Electrical Overstress/Electrostatic Discharge Symposium; 2005, p1-8, 8p |
| Databáze: | Complementary Index |
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