Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate.
| Autor: | Sato, M., Aoyama, T., Nara, Y., Ohji, Y. |
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| Zdroj: | 2009 IEEE International Reliability Physics Symposium; 2009, p45-50, 6p |
| Databáze: | Complementary Index |
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