Implementation of a carbon doped low-k material for 0.18 micron technology.
Autor: | Wei-Jen Hsia, Catabay, W., Lu, M., Perng, D.C. |
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Zdroj: | Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130); 2000, p403-406, 4p |
Databáze: | Complementary Index |
Externí odkaz: |