The 65nm tunneling field effect transistor (TFET) 0.68μm2 6T memory cell and multi-Vth device.
| Autor: | Nirschl, T., Henzler, St., Fischer, J., Bargagli-Stoffi, A., Fulde, M., Sterkel, M., Teichmann, P., Schaper, U., Einfeld, J., Linnenbank, C., Sedlmeir, J., Weber, C., Heinrich, R., Ostermayr, N., Olbrich, A., Dobler, B., Ruderer, E., Kakoschke, R., Schrufert, K., Georgakos, G. |
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| Zdroj: | Proceedings of 35th European Solid-State Device Research Conference, 2005 (ESSDERC 2005); 2005, p173-176, 4p |
| Databáze: | Complementary Index |
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