Effect of front hole channel on leakage characteristics of a-Si:H TFTs.
Autor: | Servati, P., Nathan, A., Sazonov, A. |
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Zdroj: | ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453); 2000, p247-250, 4p |
Databáze: | Complementary Index |
Externí odkaz: |