Effect of front hole channel on leakage characteristics of a-Si:H TFTs.

Autor: Servati, P., Nathan, A., Sazonov, A.
Zdroj: ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453); 2000, p247-250, 4p
Databáze: Complementary Index