Retention time of novel charge trapping memories using Al2O3 dielectrics.
| Autor: | Specht, M., Reisinger, H., Stadele, M., Hofmann, F., Gschwandtner, A., Landgraf, E., Luyken, R.J., Schulz, T., Hartwich, J., Dreeskornfeld, L., Rosner, W., Kretz, J., Risch, L. |
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| Zdroj: | ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p155-158, 4p |
| Databáze: | Complementary Index |
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