Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μm lasers using metal-organic vapor-phase epitaxy.

Autor: Plaine, G., Asplund, C., Sundgren, P., Mogg, S., Hammar, M.
Zdroj: Conference Proceedings 2001 International Conference on Indium Phosphide & Related Materials. 13th IPRM (Cat. No.01CH37198); 2001, p563-566, 4p
Databáze: Complementary Index