Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μm lasers using metal-organic vapor-phase epitaxy.
Autor: | Plaine, G., Asplund, C., Sundgren, P., Mogg, S., Hammar, M. |
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Zdroj: | Conference Proceedings 2001 International Conference on Indium Phosphide & Related Materials. 13th IPRM (Cat. No.01CH37198); 2001, p563-566, 4p |
Databáze: | Complementary Index |
Externí odkaz: |