High-performance 1.2-μm highly strained InGaAs/GaAs quantum well lasers.
| Autor: | Mogg, S., Plaine, G., Asplund, C., Sundgren, P., Baskar, K., Mulot, M., Schatz, R., Hammar, M. |
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| Zdroj: | Conference Proceedings 14th Indium Phosphide & Related Materials Conference (Cat. No.02CH37307); 2002, p107-110, 4p |
| Databáze: | Complementary Index |
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