Capacitive coupling based transient negative bit-line voltage (Tran-NBL) scheme for improving write-ability of SRAM design in nanometer technologies.
| Autor: | Mukhopadhyay, S., Rao, R., Kim, J.J., Chuang, C.T. |
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| Zdroj: | 2008 IEEE International Symposium on Circuits & Systems; 2008, p384-387, 4p |
| Databáze: | Complementary Index |
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