High Speed and Highly Cost effective 72M bit density S3 SRAM Technology with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory.
| Autor: | Soon-Moon Jung, Hoon Lim, Chadong Yeo, Kunho Kwak, Byoungkeun Son, Hanbyung Park, Jonghoon Na, Jae-Joo Shim, Changmin Hong, Kinam Kim |
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| Zdroj: | 2007 IEEE Symposium on VLSI Technology; 2007, p82-83, 2p |
| Databáze: | Complementary Index |
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